ELECTROLUMINESCENCE FROM AU SI OXYNITRIDE FILM SI STRUCTURES WITH THEFILMS HAVING DIFFERENT CHEMICAL-COMPOSITIONS/

Si oxynitride films (with thicknesses of about 40-80 Angstrom) with di fferent chemical compositions were deposited on Si wafers by three kin ds of method: electron cyclotron resonance (ECR) chemical vapour depos ition, magnetron sputtering, and direct nitration of Si wafers in an E CR plasma. The chemical composition of Si oxynitride films was examine d by x-ray photoelectron spectroscopy. Electroluminescence (EL) from t he semitransparent Au/Si oxynitride film/Si structures, and the effect s of chemical composition of the films on EL have been studied. The de pendence of EL on thermal annealing has also been reported. Experiment al results show that the dominant EL peak position varies from 640 to 700 nm, but the shoulders at about 520 and 820 nm have no apparent shi ft when the Si content in the Si oxynitride films increases.