Highly oriented rich boron B-C-N nanotubes by bias-assisted hot filament chemical vapor deposition

Highly oriented rich boron B-C-N nanotubes, prepared by bias-assisted hot f ilament chemical vapor deposition, have been examined by scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. The c ompositions of the nanotubes have been analyzed by Anger electron spectrosc opy and electron energy loss spectroscopy. The results show that the compos itions can be controlled by changing the B2H6 concentration in the reactive gas mixture and the highest boron content of 45% at atomic percentage can be obtained for the B-C-N nanotubes. As a new kind of semiconducting materi al, the photoluminescence of the B-C-N nanotubes is also studied. (C) 2000 Elsevier Science B.V. All rights reserved.