Multimillion atom molecular-dynamics (MD) simulations are performed to inve
stigate dynamics of oxidation of aluminum nanoclusters and properties and p
rocesses in nanostructured silicon carbide (n-SiC) and nanostructured amorp
hous silica (n-a-SiO2). The simulations are based on reliable interatomic i
nteractions that include both ionic and covalent effects. The simulations a
re carried out on parallel architectures using highly efficient O(N) multir
esolutions algorithms which include an adaptive load-balancing approach bas
ed on wavelets and a data-compression scheme based on fractals.
Results from the oxidation simulation reveal a passivating amorphous oxide
layer of thickness similar to 40 Angstrom, which is in excellent agreement
with experiments. The oxide layer is amorphous and has mixed tetrahedral, A
l(O-1/4)(4), and octahedral, Al(O-1/6)(6). configurations. The average mass
density in the oxide region is 75% of the bulk alumina density. Local stre
sses in the pride scale are analyzed and their correlation with the dynamic
s of oxidation is determined.
Sintering, structural correlations, and mechanical behavior of n-SiC and n-
a-SiO2 are investigated. In the case of n-SiC, both experiment and simulati
on indicate the onset of sintering around 1500 K which is much lower than t
he sintering temperature for coarse-grained SiC. In both n-SiC and n-a-SiO2
, pores are found to be self-similar. They have a fractal dimension close t
o 2 and their surface roughness exponents are similar to 0.5. Pair-distribu
tion functions and bond-angle distributions reveal a crystalline core and a
n amorphous interface in the consolidated n-SiC. In the case of nanophase s
ilica glasses, the short-range order (SRO) is similar to that in the bulk g
lass but not the intermediate-range order (IRO). In the nanophase system th
e first sharp diffraction peak (FSDP), the signature of IRO, has a much sma
ller height and is shifted toward smaller k relative to the FSDP in the bul
k system. The elastic moduli of nanophase silica glasses scale with the den
sity as similar to rho(3.5); the bulk, shear and Young's moduli of n-SiC sc
ale as similar to rho(eta), where eta is 3.51 +/- 0.02, 3.29 +/- 0.06, and
3.34 +/- 0.03, respectively. (C) 2000 Elsevier Science B.V. All rights rese
rved.