Recombination lifetime of charge carriers in DLC thin films

Authors
Bak, GW Dluzniewski, M Staryga, E Kania, S Walocha, J
Citation
Gw. Bak et al., Recombination lifetime of charge carriers in DLC thin films, DIAM RELAT, 9(7), 2000, pp. 1357-1361
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
9
Issue
7
Year of publication
2000
Pages
1357 - 1361
Database
ISI
SICI code
0925-9635(200007)9:7<1357:RLOCCI>2.0.ZU;2-P
Abstract
Decay of photocurrent in diamond-like carbon (DLC) thin films and broadband dielectric measurements of rectifying n-Si/DLC junctions were used to find the recombination lifetime of charge carriers in DLC films. The recombinat ion lifetime found from the two methods was between 10(-4) and 10(-3) s. (C ) 2000 Elsevier Science S.A. All rights reserved.