Surface morphology and electrical properties of boron-doped diamond films synthesized by microwave-assisted chemical vapor deposition using trimethylboron on diamond (100) substrate

Prime novelty: The smoothness of the synthesized boron-doped diamond was im proved by the pre-treatment of a hydrogen plasma. Moreover, the Hall mobili ty also increased with this pre-treatment. Surface morphology and electrica l properties, such as electrical conductivity, hole concentration and Hall mobility, were investigated for boron-doped diamond films, which were synth esized by microwave-assisted chemical vapor deposition (MPCVD) on a (100) d iamond substrated. Trimethylburon (TMB) was used as a dopant source and met hane (CH4) was used as a carbon source. The morphology of the synthesized d iamond surface depended on the MPCVD conditions such as TMB and CH4 concent rations in the gas phase, and lower concentrations of TMB and CH4 led to a smoother surface. When the substrate was treated in a hydrogen plasma, the electrical properties of the boron-doped diamond films, as well as the smoo thness of the surface, were improved. After optimizing the synthesis condit ions, Hall mobility reached to 2020 cm(2) V-1 s(-1) at 243 K for a diamond film with a hole concentration of 5 x 10(12) cm(-3). (C) 2000 Elsevier Scie nce S.A. All rights reserved.