Intrinsic stress evolution in diamond films prepared in a CH4-H-2-NH3 hot filament chemical vapor deposition system

Citation
Ng. Shang et al., Intrinsic stress evolution in diamond films prepared in a CH4-H-2-NH3 hot filament chemical vapor deposition system, DIAM RELAT, 9(7), 2000, pp. 1388-1392
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
9
Issue
7
Year of publication
2000
Pages
1388 - 1392
Database
ISI
SICI code
0925-9635(200007)9:7<1388:ISEIDF>2.0.ZU;2-3
Abstract
The intrinsic stress in diamond films prepared in a CH4-H-2-NH3 hot filamen t chemical vapor deposition system has been investigated by the substrate c urvature technique as a function of film thickness (2.2-50 mu m) and ammoni a concentration (0-1.4%). Our results indicated that the him stress changed from compressive to tensile with the increase of film thickness and diamon d quality at a constant ammonia concentration of 0.5%. The existence of a n on-diamond phase was found to be beneficial to the relaxation of intrinsic tensile stress in the films. The intrinsic stress in diamond films was tens ile at an ammonia concentration from 0 to 1.4%, while the maximum tensile s tress existed at 0.75% NH3. The possible origin of intrinsic tensile stress was discussed. (C) 2000 Elsevier Science S.A All rights reserved.