Strained 1.3 mu m MQW AlGaInAs lasers grown by digital alloy MBE

Authors
Springthorpe, AJ Garanzotis, T Paddon, P Pakulski, G White, KI
Citation
Aj. Springthorpe et al., Strained 1.3 mu m MQW AlGaInAs lasers grown by digital alloy MBE, ELECTR LETT, 36(12), 2000, pp. 1031-1032
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
12
Year of publication
2000
Pages
1031 - 1032
Database
ISI
SICI code
0013-5194(20000608)36:12<1031:S1MMMA>2.0.ZU;2-F
Abstract
AlGaInAs strained MQW lasers, emitting at 1.3 mu m, have been prepared for the first time using a digital alloy approach. 2 mu m stripe geometry laser s have characteristics comparable to those of lasers prepared using bulk al loy layers. Infinite length threshold current densities are as low as 140kA /cm(2)/quantum well, and T-0 values (20-40 degrees C) range from 75-90K for chip lengths of 375-2375 mu m.