High sensitivity broadband quantum well infrared photodetector with double/linear-graded barrier for 8-12 mu m detection

Authors
Lee, JH Li, SS Tidrow, MZ Liu, WK
Citation
Jh. Lee et al., High sensitivity broadband quantum well infrared photodetector with double/linear-graded barrier for 8-12 mu m detection, ELECTR LETT, 36(12), 2000, pp. 1058-1059
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
12
Year of publication
2000
Pages
1058 - 1059
Database
ISI
SICI code
0013-5194(20000608)36:12<1058:HSBQWI>2.0.ZU;2-8
Abstract
The design, fabrication, and characterisation of a high performance double barrier (DB) AlGaAs/InGaAs/AlGaAs linear-graded barrier (LGB) quantum well infrared photodetector (QWIP) is reported for 8-10 mu m detection. Broadban d detection under positive bias and normal spectral response under negative bias conditions were observed in this device due to the use of the AlxGa1- xAs LGB- (x = 0.018-0.09) and a thin Al0.15Ga0.85As DB structure.