Pseudorandom pulsed I/V characterisation of MESFET/HEMT devices

Authors
Rodriguez-Tellez, J Fernandez, T Mediavilla, A Tazon, A
Citation
J. Rodriguez-tellez et al., Pseudorandom pulsed I/V characterisation of MESFET/HEMT devices, ELECTR LETT, 36(12), 2000, pp. 1075-1076
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
12
Year of publication
2000
Pages
1075 - 1076
Database
ISI
SICI code
0013-5194(20000608)36:12<1075:PPICOM>2.0.ZU;2-0
Abstract
A new automated system for observing the dependence of the frequency disper sion effect on an electric field for GaAs MESFET/HEMT devices is presented. The new procedure employs a pseudorandom pulse I/V measurement system for observing the memory effect in these devices.