SiGe heterojunction bipolar transistor with 213GHz f(T) at 77K

Authors
Zerounian, N Aniel, F Adde, R Gruhle, A
Citation
N. Zerounian et al., SiGe heterojunction bipolar transistor with 213GHz f(T) at 77K, ELECTR LETT, 36(12), 2000, pp. 1076-1078
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
12
Year of publication
2000
Pages
1076 - 1078
Database
ISI
SICI code
0013-5194(20000608)36:12<1076:SHBTW2>2.0.ZU;2-S
Abstract
An Si/Si0.65Ge0.35 abrupt heterojunction bipolar transistor with transit fr equencies f(T) of 133 and 213GHz at 300 and 77K, respectively, is reported, The corresponding maximum oscillation frequencies f(max) are 81 and 115GHz . The f(T) of 213GHz is the highest value yet reported for any silicon-base d bipolar transistor. A detailed analysis of the intrinsic delay times reve als that the base transit lime plays the dominant role.