Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 angstrom

Electrical and reliability properties of ultrathin La2O3 gate dielectric ha ve been investigated. The measured capacitance of 33 Angstrom La2O3 gate di electric is 7.2 mu F/cm(2) that gives an effective K value of 27 and an equ ivalent oxide thickness of 4.8 Angstrom. Good dielectric integrity is evide nce from the low leakage current density of 0.06 A/cm(2) at -1 V, high effe ctive breakdown field of 13.5 MV/cm, low interface-trap density of 3 x 10(1 0) eV-1/cm(2), and excellent reliability with more than 10 years lifetime e ven at 2 V bias. In addition to high K, these dielectric properties are ver y close to conventional thermal SiO2.