Sb-heterostructure interband backward diodes

Backward diodes are a version of Esaki tunnel diodes that are useful for mi xing and detection. Ge backward diodes in particular have been used as temp erature insensitive, zero bias square law detectors, capable of translating low level rf power into de voltage or current with extreme linearity and l ow noise. However, Ge diodes are difficult to reproducibly manufacture and are physically fragile. Here we demonstrate specially designed Sb-heterostr ucture-based backward diodes grown by molecular beam epitaxy. These diodes have superior figures of merit compared to Ge diodes, especially the curren t density and junction resistance, and are reproducible and physically rugg ed. In addition, the flexibility of MBE growth allows easy tailoring of the layer structure to maximize the desired figure of merit for a given applic ation.