High-voltage lateral RESURF MOSFET's on 4H-SiC

High-voltage lateral RESURF MOSFET's have been fabricated on 4H-SiC with bo th nitrogen and phosphorus as source/drain and RESURF region implants. Bloc king voltages as high as 1200 V and specific on-resistances of 4 Omega cm(2 ) have been obtained, with the high on-resistance attributed to poor invers ion layer mobility. Phosphorus is most appropriate for the source/drain imp lants due to low sheet resistance and contact resistance with low temperatu re anneals. However, poor activation of low dose phosphorus implants at 120 0 degrees C makes nitrogen the preferred choice for the RESURF region.