Substrate crosstalk suppression capability of silicon-on-insulator substrates with buried ground planes (GPSOI)

Experimental s(21) transmission crosstalk studies have been conducted on si licon-on-insulator substrates with buried ground planes (GPSOI's) where a 2 Omega per square metal-silicide buried ground plane existed between a 15 O mega-cm p-type silicon substrate and a 1 mu m thick buried CVD oxide layer. Locally grounded transmission test structures fabricated on GPSOI were fou nd to exhibit 20 dB increased crosstalk suppression compared to published d ata for high resistivity (200 Omega-cm) SOI substrates incorporating capaci tive guard rings over a frequency range from 500 MHz to 50 GHz, This repres ents an order of magnitude improvement in crosstalk power suppression capab ility compared to existing state-of-the-art suppression techniques in silic on substrates.