Iron nitride films were deposited on Ge(100) wafers by a reactive ion
beam sputter deposition of iron in an ammonia atmosphere. The composit
ion and microstructure of these films were monitored by Rutherford bac
kscattering spectroscopy analyses and X-ray diffraction experiments. T
he influence of ammonia partial pressure on the microstructure of the
films was studied. It was found that the optimum ammonia pressure for
the alpha ''-Fe16N2 phase formation was about 5 x 10(-4) Torr or a lit
tle higher. The thermal stability of these Fe-N films was also investi
gated. Upon annealing at a temperature below 180 degrees C in a flowin
g nitrogen atmosphere, the alpha '' phase would decompose and nitrogen
atoms would be released from the films.