Calculations of hole transport characteristics in bulk GaSb with comparisons to GaAs

Authors
Damayanthi, P Joshi, RP McAdoo, JA
Citation
P. Damayanthi et al., Calculations of hole transport characteristics in bulk GaSb with comparisons to GaAs, J APPL PHYS, 88(2), 2000, pp. 817-821
Citations number
56
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
2
Year of publication
2000
Pages
817 - 821
Database
ISI
SICI code
0021-8979(20000715)88:2<817:COHTCI>2.0.ZU;2-M
Abstract
Field dependent drift velocity results are presented for hole transport in bulk gallium antimonide material based on a Monte Carlo model which include s energy band warping. Transient drift velocities are demonstrated to be hi gher than for gallium arsenide. The steady-state characteristics are also s hown to be superior. The material appears to have potential for high-speed photodetection. (C) 2000 American Institute of Physics. [S0021-8979(00)0391 4-1].