Correlation functions from multiple solution of the transient Boltzmann equation in semiconductors: Application to noise temperature of holes in silicon

We present a new numerical method to calculate the correlation functions in semiconductor materials by a direct solution of the Boltzmann equation. Th e correlation function is calculated solving a set of time-dependent Boltzm ann equations corresponding to different initial conditions. As application , we present the calculation of the correlation function of velocity fluctu ations and the noise temperature for holes in silicon at T = 300 K. The res ults are in good agreement with Monte Carlo calculation as well as with exp erimental data. (C) 2000 American Institute of Physics. [S0021-8979(00)0271 4-6].