Bulk growth of the III-V diluted magnetic semiconductor, Ga1-xFexSb is repo
rted for different iron concentrations. Room-temperature optical absorption
coefficient measurements were performed. The dependence of the band gap E-
g on the Fe concentration was studied. The band gap decreased with increasi
ng x, and the variation was observed to follow a nonlinear trend. Photolumi
nescence (PL) measurements at 18 K were also carried out. The PL spectra sh
owed a clear peak shift due to incorporation of Fe in the lattice, thus agr
eeing with the optical absorption results. (C) 2000 American Institute of P
hysics. [S0021-8979(00)02514-7].