Absorption and photoluminescence spectra of the diluted magnetic semiconductor Ga1-xFexSb

Bulk growth of the III-V diluted magnetic semiconductor, Ga1-xFexSb is repo rted for different iron concentrations. Room-temperature optical absorption coefficient measurements were performed. The dependence of the band gap E- g on the Fe concentration was studied. The band gap decreased with increasi ng x, and the variation was observed to follow a nonlinear trend. Photolumi nescence (PL) measurements at 18 K were also carried out. The PL spectra sh owed a clear peak shift due to incorporation of Fe in the lattice, thus agr eeing with the optical absorption results. (C) 2000 American Institute of P hysics. [S0021-8979(00)02514-7].