Electrical characterization of P-b centers in (100)Si-SiO2 structures: Theinfluence of surface potential on passivation during post metallization anneal
La. Ragnarsson et P. Lundgren, Electrical characterization of P-b centers in (100)Si-SiO2 structures: Theinfluence of surface potential on passivation during post metallization anneal, J APPL PHYS, 88(2), 2000, pp. 938-942
Capacitance-voltage measurements were made on Cr-gated metal-oxide-silicon
structures with ultrathin (similar to 30 Angstrom) thermal oxides. Using an
empirical model, activation energies for the passivation of the P-b center
were determined and found to be dependent on the charge state of the defec
t. Depassivation was found to occur at positive gate biases. (C) 2000 Ameri
can Institute of Physics. [S0021-8979(00)06810-9].