Electrical characterization of P-b centers in (100)Si-SiO2 structures: Theinfluence of surface potential on passivation during post metallization anneal

Authors
Ragnarsson, LA Lundgren, P
Citation
La. Ragnarsson et P. Lundgren, Electrical characterization of P-b centers in (100)Si-SiO2 structures: Theinfluence of surface potential on passivation during post metallization anneal, J APPL PHYS, 88(2), 2000, pp. 938-942
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
2
Year of publication
2000
Pages
938 - 942
Database
ISI
SICI code
0021-8979(20000715)88:2<938:ECOPCI>2.0.ZU;2-G
Abstract
Capacitance-voltage measurements were made on Cr-gated metal-oxide-silicon structures with ultrathin (similar to 30 Angstrom) thermal oxides. Using an empirical model, activation energies for the passivation of the P-b center were determined and found to be dependent on the charge state of the defec t. Depassivation was found to occur at positive gate biases. (C) 2000 Ameri can Institute of Physics. [S0021-8979(00)06810-9].