(Mn, Sb) doped-Pb(Zr, Ti)O-3 infrared detector arrays

(Mn, Sb) doped Pb(Zr, Ti)O-3 (PMSZT) thin film infrared (IR) detectors were integrated with Si substrates. The epitaxial PMSZT thin films, deposited o n c-axis oriented YBa2Cu3O7-y (YBCO) bottom electrodes, show good ferroelec tric properties with a remnant polarization P-r of 31 mu C/cm(2), a spontan eous polarization P-s of 38 mu C/cm(2), and a coercive field E-c of 21 kV/c m under an electric field of 76 kV/cm. Doping with Mn and Sb into Pb(Zr, Ti )O-3 (PZT) not only decreased the Curie temperature T-C from 350 degrees C for PZT to 175 degrees C for PMSZT, but also enhanced IR responsivity signi ficantly. PMSZT thin films show high figures of merit, F-i of 15.5 x 10(-9) C cm/J, F-v of 1758 cm(2)/C and F-d of 5 x 10(-5) Pa-1/2 at 25 degrees C. IR detector arrays, fabricated with PMSZT films deposited on YBCO microbrid ges with an air gap between them and the substrate for reduced thermal mass , show a higher IR voltage responsivity compared to those without an air ga p. (C) 2000 American Institute of Physics. [S0021-8979(00)00911-7].