Applied voltage effect on the electron delocalization of excited Ce3+ in SrS : Ce electroluminescent devices

Authors
Barthou, C Benoit, J Benalloul, P Polamo, K Soininen, E
Citation
C. Barthou et al., Applied voltage effect on the electron delocalization of excited Ce3+ in SrS : Ce electroluminescent devices, J APPL PHYS, 88(2), 2000, pp. 1061-1066
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
2
Year of publication
2000
Pages
1061 - 1066
Database
ISI
SICI code
0021-8979(20000715)88:2<1061:AVEOTE>2.0.ZU;2-G
Abstract
The electro-optical behavior of SrS:Ce atomic layer epitaxy thin films elec troluminescent devices with Ce3+ ions in different point symmetries is anal yzed. Under selective photonic excitation in the lower absorption band and for voltage below the EL threshold, it is shown that the delocalization pro bability of Ce3+ excited ions is much lower for Ce3+ ions in octahedral sit es than in lower symmetry ones. (C) 2000 American Institute of Physics. [S0 021-8979(00)04814-3].