Laser-plasma interactions in 532 nm ablation of Si

Citation
Gw. Han et Pt. Murray, Laser-plasma interactions in 532 nm ablation of Si, J APPL PHYS, 88(2), 2000, pp. 1184-1186
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
88
Issue
2
Year of publication
2000
Pages
1184 - 1186
Database
ISI
SICI code
0021-8979(20000715)88:2<1184:LII5NA>2.0.ZU;2-V
Abstract
Single-crystal Si was ablated by pulsed 532 nm laser radiation, and the vol ume of removed material and the time-resolved current of ejected ions were measured. These data were used to determine the ion fraction of ejected mat erial. The ion fractions provide direct evidence that the break point is du e to the laser-plasma interaction. This is confirmed by the speed distribut ions of the positive ions and from the integrated intensities of the low-sp eed ion component. (C) 2000 American Institute of Physics. [S0021-8979(00)0 4614-4].