Citation
H. Hauser et al., Anisotropic magnetoresistance effect field sensors, J MAGN MAGN, 215, 2000, pp. 788-791
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
03048853
→ ACNP
Volume
215
Year of publication
2000
Pages
788 - 791
Database
ISI
SICI code
0304-8853(200006)215:<788:AMEFS>2.0.ZU;2-1
Abstract
The parameters of the sensor layout and sensitivity considerations are disc
ussed. The anisotropic magnetoresistive effect of DC-sputtered Ni 81%-Fe 19
% films has been increased up to Delta p/p = 3.93% at 50 nm thickness and a
sensitivity of 500 mu V/mu T can be achieved by an elliptically shaped sen
sor layout. (C) 2000 Elsevier Science B.V. All rights reserved.