Surface oxidation to improve water-based gelcasting of silicon nitride

Citation
Y. Huang et al., Surface oxidation to improve water-based gelcasting of silicon nitride, J MATER SCI, 35(14), 2000, pp. 3519-3524
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE
ISSN journal
00222461 → ACNP
Volume
35
Issue
14
Year of publication
2000
Pages
3519 - 3524
Database
ISI
SICI code
0022-2461(200007)35:14<3519:SOTIWG>2.0.ZU;2-K
Abstract
During the process of water-based gelcasting of Si3N4, the gas discharged d ue to the reactions on the solid-liquid interface can lead to a great deal of big bubbles in the green bodies. To improve the process a type of method based on surface oxidation is developed. By means of the method a layer of SiO2 and Si2N2O, which can prohibit the gas from being discharged effectiv ely, is formed on the surface of Si3N4 powders. Oxidized powders can be dis persed better than those not oxidized, and after gas-pressure-sintering mec hanical property of the gelcast samples made from the oxidized powder is mu ch better than that of dry-pressed and then isostatic pressed samples. (C) 2000 Kluwer Academic Publishers.