Hl. Wang et al., Photolelectrochemistry of nanostructured WO3 thin film electrodes for water oxidation: Mechanism of electron transport, J PHYS CH B, 104(24), 2000, pp. 5686-5696
Nanostructured WO3 thin films were prepared, and photooxidation of water at
such films was studied in a pH 4.68 solution. The cathodic current at pote
ntials below -100 mV versus a saturated Ag/AgCl electrode was related to th
e reversible intercalation of H+ and/or Na+. The photocurrent onset was at
similar to 100 mV, and the saturation photocurrent was at potentials >800 m
V. In the range 300-1000 mV, photocurrent increased linearly with the incre
asing light intensity, indicating that charge carrier generation dominates
the photoelectrochemical cell. Under illumination, linear log\i\ versus pot
ential (Tafel) behavior was registered in the range 300-650 mV. Tafel slope
s and exchange current densities are reported. The incident photon-to-curre
nt efficiency (IPCE) and the quantum yield (Phi) were high, regardless of t
he incidence of the light (front side, EE, or backside, SE, illumination).
Both IPCEEE and IPCESE increased with film thickness. The low wavelength ed
ge of the action spectra was red-shifted and moved toward the absorption ba
nd edge. Both Phi(EE) and Phi(SE) reached a plateau region at shorter wavel
ength. In the plateau, (Phi(SE) was close to I and independent of the film
thickness, whereas Phi(EE) was similar to 20% lower and decreasing with inc
reasing film thickness. Adopting a simple diffusion model for the electron
transport, the diffusion length of electrons (L) was estimated to be 6.7 mu
m for a 5.0-mu m thick film. Higher activation energies, E-A, were obtaine
d at lower potentials (e.g., 0.60 eV at 200 mV and 0.32 eV at 300 mV). The
E-A was <0.21 eV in the range 400-700 mV, and decreased further to 0.06 eV
at 1000 mV. The variation of E-A with potential was explained by the existe
nce of a distribution of electron-trapping states in an energy range around
0.6 V below the conduction band.