Exact solution of the electrostatic problem for a single-electron dual-junction-array trap

We present an exact analytical solution to the electrostatic problem of the biased single-electron dual-junction-array trap, which consists of equal s tray capacitances C-0, equal junction capacitances C, equal input gate capa citances C-1, and a coupling capacitance C-C. The threshold voltages are in vestigated for various charge solitons including a single electron, an exci ton, and a combined exciton and single electron. Our results show that thei r threshold voltages have strong dependences on the cotunnelling, C-0/C, C- 1/C, C-C/C, and the number of junctions, and that various types of charge s oliton transport occur according to these parameters. Previous discussions in the literature have neglected the effect of the stray capacitance, but w e find that the effect plays an important role in the charge soliton transp ort.