Chemical vapor deposition of SnO2 thin films from bis(beta-diketonato)tin complexes

A series of bis(beta-diketonato)tin compounds have been systematically synt hesized and examined as precursors for chemical vapor deposition of SnO2 th in films. These complexes were characterized by elemental analyses and NMR, IR and mass spectroscopic methods. X-ray single-crystal determination of S n(tfac)(2) reveals that the complex possesses a distorted trigonal bipyrami dal structure. The SnO2 films can be deposited on the substrates such as si licon, titanium nitride, and glass by using Sn(hfac)(2), Sn(tfac)(2) and Sn (acac)(2) as CVD precursors at deposition temperatures of 300-600 degrees C with a carrier gas of O-2. The deposition rates range from 20 to 600 Angst rom/min. Deposited films have been characterized by XRD, SEM, AFM, AES and AAS analyses.