In recent years, the positive muon, used as a chemical analogue of the prot
on, has proven of great value in studies of the behaviour of hydrogen defec
ts in semiconductors, especially the Group IVA elements Si and Ge. In the p
resent work we explore the application of the mu SR techniques to the Group
VIA semiconductors S and Se, reporting new data for Se and comparing these
with previous data for S. The chemical species formed following muon impla
ntation include two paramagnetic centres, namely atomic muonium and a molec
ular radical, together with one or more muon states which appear electronic
ally diamagnetic. The reaction schemes are evidently similar in the two ele
ments although there are significant quantitative differences in the kineti
cs. The very close similarity in the muon-electron hyperfine constants of t
he radical states tends to support their assignment to the simple diatomic
species SeMu and SMu, close relatives of the hydroxyl radical OH. Copyright
(C) 2000 John Wiley & Sons, Ltd.