Bismuth sulphoselenide [Bi-2(S,Se)(3)] thin films were obtained onto the th
oroughly cleaned amorphous glass substrates using a simple chemical growth
process. The basic ingredients used were analytical grade and a selenium so
urce was obtained from a reflux action of the sodium sulphite with the meta
l selenium. Growth kinetics and mechanism of film formation were studied fo
r these films and are explained in brief. The compositional analysis was ca
rried out to determine the actual contents of Bi3+ and Se2- in the films ta
ken out of the bath. The X-ray diffraction analysis showed microcrystalline
nature of the samples. It further revealed that the bismuth sulphoselenide
is a ternary mixed chalcogenide having a chemical formula [Bi-2(S,Se)(3)].
Optical studies showed direct transitions for these films with a band gap
of 1.9 eV for Bi2S3 and 0.97 eV for Bi2Se3. Thermoelectric power measuremen
ts were performed on the [Bi-2(S,Se)(3)] films and showed n-type conduction
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