A new process for deposition of the CdTe thin films

An extremely simple and cheap method for deposition of the n-CdTe thin film s is presented. Goad quality deposits are obtained at 75 degrees C, 10+/-0. 5 pH, and deposition time equal to 90 min. Light grey coloured and uniform CdTe layers of approximately 0.3 mu m thick are obtained by this process. T he compositional analyses showed that the baked CdTe films are little bit C d-rich. The as-deposited CdTe layers are crystalline with a mixture of the hexagonal and cubic structures. The microscopic observations show some over growth on the grown spherical type crystallites which improve after baking at 100 degrees C. Optical studies revealed a high absorption coefficient (1 0(4) cm(-1)) with a direct gap of 1.45 eV. The films are of the n-type cond uction with a room temperature electrical resistivity of 10(6) Omega cm. Th e activation energies of an electrical conduction have been determined and the possible conduction mechanism is discussed. (C) 2000 Elsevier Science S .A. All rights reserved.