Surface tension of molten silicon measured by the electromagnetic levitation method under microgravity

Citation
H. Fujii et al., Surface tension of molten silicon measured by the electromagnetic levitation method under microgravity, MET MAT T A, 31(6), 2000, pp. 1585-1589
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science",Metallurgy
Journal title
METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE
ISSN journal
10735623 → ACNP
Volume
31
Issue
6
Year of publication
2000
Pages
1585 - 1589
Database
ISI
SICI code
1073-5623(200006)31:6<1585:STOMSM>2.0.ZU;2-0
Abstract
The surface tension of molten silicon was measured using the electromagneti c levitation method under microgravity. The atmosphere was Ar-3 pet H-2 pur ified by Pt asbestos and magnesium perchlorate. The partial oxygen pressure is estimated to be less than 1.1 x 10(-14) Pa. The spherical droplet shape was controlled by changing the current ratio between a quadrupole coil and a dipole coil. The surface tension of molten silicon can be expressed by t he equation gamma = 735 - 0.074 (T - 1687) where gamma is the surface tension (in mN/m) and T is the temperature (in K ). The value was measured over a wide range of temperatures, from 230 K bel ow the melting point (1687 K) to 1890 K. The scatter of the measured surfac e-tension values is much less than that measured by conventional methods.