H. Fujii et al., Surface tension of molten silicon measured by the electromagnetic levitation method under microgravity, MET MAT T A, 31(6), 2000, pp. 1585-1589
The surface tension of molten silicon was measured using the electromagneti
c levitation method under microgravity. The atmosphere was Ar-3 pet H-2 pur
ified by Pt asbestos and magnesium perchlorate. The partial oxygen pressure
is estimated to be less than 1.1 x 10(-14) Pa. The spherical droplet shape
was controlled by changing the current ratio between a quadrupole coil and
a dipole coil. The surface tension of molten silicon can be expressed by t
he equation
gamma = 735 - 0.074 (T - 1687)
where gamma is the surface tension (in mN/m) and T is the temperature (in K
). The value was measured over a wide range of temperatures, from 230 K bel
ow the melting point (1687 K) to 1890 K. The scatter of the measured surfac
e-tension values is much less than that measured by conventional methods.