Results on the radiation hardness of photodiodes to fast neutrons are prese
nted. Four photodiodes (three avalanche photodiodes from two manufacturers,
and one PIN photodiode) were exposed to neutrons from a Cf-252 source at O
ak Ridge National Laboratory. The effects of this radiation on many paramet
ers such as gain, intrinsic dark current, quantum efficiency, noise, capaci
tance: and voltage and temperature coefficients of the gain for these devic
es for fluences up to similar to 2x10(13) neutrons/cm(2) are shown and disc
ussed. While degradation of APDs occurred during neutron irradiation, they
remained photosensitive devices with gain. (C) 2000 Elsevier Science B.V. A
ll rights reserved.