Dispersive transport of protons in oxides confined in Si/SiO2/Si structures

Protons have been thermally generated in the gate oxides of n-channel field effect transistors formed using the buried oxide of silicon on insulator ( SOI) unibond wafers as the gate oxide and the top Si layer as the gate. The transport of the protons under applied electric field is dispersive, can b e modeled using continuous time random-walk theory, and is suggested to he significantly more rapid than in the case of radiation induced protons in t hermally grown oxides. An unexpected asymmetry observed in the electrical r esponse in the SOI structures remains unexplained.