Resonant Raman scattering in crystalline GeSe2

Citation
T. Nakaoka et al., Resonant Raman scattering in crystalline GeSe2, PHYS REV B, 61(23), 2000, pp. 15569-15572
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
61
Issue
23
Year of publication
2000
Pages
15569 - 15572
Database
ISI
SICI code
0163-1829(20000615)61:23<15569:RRSICG>2.0.ZU;2-N
Abstract
The relationship between the local structures and the electronic stares of layered crystalline GeSe2 are studied by resonant Raman scattering. We obse rve 34 Raman-active modes of symmetry A(g), and find a selective resonant e nhancement of the modes. Almost all the modes are enhanced around 2.7 eV ex cept the two modes. This selective enhancement is attributed to the resonan t effect with the localized exciton. We find the essential difference in th e atomic motions between the resonant and nonresonant modes. Such behaviors are explained by a structural model of the localized exciton.