Iv. Ignatiev et al., Carrier relaxation dynamics in InP quantum dots studied by artificial control of nonradiative losses, PHYS REV B, 61(23), 2000, pp. 15633-15636
A method to study carrier relaxation dynamics based on the artificial contr
ol of nonradiative losses by an external electric field is proposed. Clear
evidence of phonon-assisted relaxation as the main relaxation mechanism of
hot electron-hole pairs in InP self-assembled quantum dots is found by appl
ying the proposed method. Efficient one-step relaxation processes with emis
sion of acoustic and optical phonons are observed. These findings give impo
rtant insights into the interaction of the electron-hole pairs in quantum d
ots with the phonon subsystem.