Raman scattering from CdSe/ZnSe self-assembled quantum dot structures

We report Raman scattering from CdSe/ZnSe self-assembled quantum dot struct ures. A series of samples, each with a different growth-interruption time b efore ZnSe caping of the CdSe dots, is investigated. ZnSe longitudinal opti cal (LO) phonon shifts as a function of the interruption time show a comple x pattern due to the evolution of CdSe dots. We observe an LO phonon from t he CdSe dots at similar to 221 cm(-1) as well as an interface phonon at sim ilar to 245 cm(-1). We present evidence that the interface phonon is locali zed at the interface between the CdSe dots and the ZnSe cap layer.