Wurtzite InP formation during swift Xe-ion irradiation

Ion beam-induced amorphization and crystallization in InP implanted at room temperature with swift (250 and 340 MeV) Xe+ ions to doses of 5 X 10(13) a nd 1 X 10(14) cm(-2), respectively, are investigated by transmission electr on microscopy. For ion fluences above 5 x 10(13) cm(-2), amorphization is r egistered in the near-surface region as well as around the mean ion range. The amorphous layers produced due to electronic energy deposition in the ne ar-surface region are found to have different short-range atomic structure as compared to those produced in the depth region of nuclear energy deposit ion. In the case of the highest ion fluence (1 X 10(14) cm(-2)) a partial c rystallization of the amorphous surface layer to polycrystalline InP is obs erved. The process of the crystallization passes a stage of wurtzite InP ph ase formation.