Spectroscopy of the phosphorus impurity in ZnSe epitaxial layers grown by molecular-beam epitaxy

Phosphorus-implanted and plasma-doped ZnSe epitaxial layers grown by molecu lar-beam epitaxy are studied through photoluminescence (PL), selective FL, and PL-excitation spectroscopies. We show that with an activation energy of 85 +/- 1 meV, the P-related shallow-acceptor level is the shallowest accep tor ever detected in ZnSe. The series of excited states of this acceptor re veals that it behaves like all substitutional accepters. We thus identify i t as being the simple P-Se substitutional impurity. Its excitonic emission definitely occurs at 2.791 eV. Negligible P-related deep levels can be dete cted by FL. However, a line which is relatively strongly coupled to phonons is detected at 2.796 eV. This line arises from P-related defects involving P incorporated on other-than-Se-substitutional sites. Finally, the lack of conductivity of our ZnSe:P samples, which does not stem from deep defects, could be explained by an AX-like behavior of the P impurity.