Copper interface induced relaxation of TiO2(110)-1X1

Citation
G. Charlton et al., Copper interface induced relaxation of TiO2(110)-1X1, PHYS REV B, 61(23), 2000, pp. 16117-16120
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
61
Issue
23
Year of publication
2000
Pages
16117 - 16120
Database
ISI
SICI code
0163-1829(20000615)61:23<16117:CIIROT>2.0.ZU;2-F
Abstract
Surface x-ray diffraction has been used to examine the effect of a Cu overl ayer on the bulk structural relaxations of TiO2(110) 1 x 1). The Ti atoms a t this buried interface are at close to their bulk-terminated positions, re presenting a derelaxation from the clean surface positions by up to about 0 .2 Angstrom. In contrast, O atom vertical and lateral displacements are enh anced, with values of up to 0.4 +/- 0.1 Angstrom and 0.6 +/- 0.1 Angstrom, respectively. This enhanced relaxation is consistent with Cu-O bonding.