Citation
Vg. Zavodinsky et al., Nitrogen trapping of boron and phosphorus in silicon, PHYS LOW-D, 3-4, 2000, pp. 13-17
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES
ISSN journal
02043467
→ ACNP
Volume
3-4
Year of publication
2000
Pages
13 - 17
Database
ISI
SICI code
0204-3467(2000)3-4:<13:NTOBAP>2.0.ZU;2-8
Abstract
Using ab initio (Hartree-Fock and local density approximation) and semiempi
rical (Austin Model 1) calculations we have studied the energetics and elec
tronic structures of N+B and N+P complexes. We have found that these comple
xes are electrically inactive. The energy gains are 1.6 eV for the N+B coup
ling and 2.4 eV for the N+P pairing. The N-P and N-B interatomic equilibriu
m distances are about 3.5 Angstrom for the both complexes.