Preparation of II-VI group semiconductor nanowire arrays by dc electrochemical deposition in porous aluminum oxide templates

II-VI group compound semiconductors such as CdS, CdSe, and CdTe nanowire ar rays have been prepared by direct current electrodeposition in porous anodi c aluminum oxide template from nonaqueous electrolyte. SEM and TEM results show that these nanowires have a highly anisotropic structure of aligned na nowires with diameters of 15-200 nm, which are consistent with the diameter s of the templates used. Electron diffraction and HREM investigations demon strate that the crystalline structures of these nanowires are uniform hexag onal single crystal. This approach can be used to fabricate single crystal nanowire arrays of a wide range of semiconductors and other materials.