Optical absorption property of oxidized free-standing porous silicon films

Citation
Ds. Xu et al., Optical absorption property of oxidized free-standing porous silicon films, PUR A CHEM, 72(1-2), 2000, pp. 237-243
Citations number
30
Categorie Soggetti
Chemistry
Journal title
PURE AND APPLIED CHEMISTRY
ISSN journal
00334545 → ACNP
Volume
72
Issue
1-2
Year of publication
2000
Pages
237 - 243
Database
ISI
SICI code
0033-4545(200001/02)72:1-2<237:OAPOOF>2.0.ZU;2-3
Abstract
We have systematically studied the evolution of the optical absorption of f reestanding PS films during thermal oxidation at 200 degrees C in air. Our experiment results show the evolution of transmission curve is quite compli cated, which red-shifts first and then blueshifts during thermal oxidation. At the same time, the transmission at the low energy decreases first and t hen increases. We propose an explanation as follows: (1) the energy gap ass ociated with each crystallite should increase during thermal oxidation proc ess, due to the quantum confinement effect; (2) the energy gap should decre ase with an increase in oxygen termination atoms. Both the increasing of th e gap due to the quantum confinement effect and the decreasing of the gap d ue to the Si-O bond formation cause a complicated evolution of optical abso rption.