The Al/silicon rich oxides/Si P-N induced junction as a photodetector

Authors
Aceves, M Calleja, W Falcony, C Reynoso-Hernandez, JA
Citation
M. Aceves et al., The Al/silicon rich oxides/Si P-N induced junction as a photodetector, QUIM ANAL, 18, 1999, pp. 102-104
Citations number
7
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
QUIMICA ANALITICA
ISSN journal
02120569 → ACNP
Volume
18
Year of publication
1999
Supplement
1
Pages
102 - 104
Database
ISI
SICI code
0212-0569(1999)18:<102:TAROPI>2.0.ZU;2-U
Abstract
In this paper is pointed out that the Al/SRO/Si device have a dual behavior : as a MOS capacitor and as P - N junction. It is shown with experimental r esults that the induced P - N Junction can be used for practical purposes. A natural extension of this results is to use the induced P - N junction to detect photoradiation.