Fractional quantum Hall effect in organic molecular semiconductors

Citation
Jh. Schon et al., Fractional quantum Hall effect in organic molecular semiconductors, SCIENCE, 288(5475), 2000, pp. 2338-2340
Citations number
24
Categorie Soggetti
Multidisciplinary,Multidisciplinary,Multidisciplinary
Journal title
SCIENCE
ISSN journal
00368075 → ACNP
Volume
288
Issue
5475
Year of publication
2000
Pages
2338 - 2340
Database
ISI
SICI code
0036-8075(20000630)288:5475<2338:FQHEIO>2.0.ZU;2-S
Abstract
High-quality crystals of the organic molecular semiconductors tetracene and pentacene were used to prepare metal-insulator-semiconductor (MIS) structu res exhibiting hole and electron mobilities exceeding 10(4) square centimet ers per volt per second, The carrier concentration in the channel region of these ambipolar field-effect devices was controlled by the applied gate vo ltage. Well-defined Shubnikov-de Haas oscillations and quantized Hall plate aus were observed for two-dimensional carrier densities in the range of 10( 11) per square centimeter. Fractional quantum Hall states were observed in tetracene crystals at temperatures as high as similar to 2 kelvin.