High-quality crystals of the organic molecular semiconductors tetracene and
pentacene were used to prepare metal-insulator-semiconductor (MIS) structu
res exhibiting hole and electron mobilities exceeding 10(4) square centimet
ers per volt per second, The carrier concentration in the channel region of
these ambipolar field-effect devices was controlled by the applied gate vo
ltage. Well-defined Shubnikov-de Haas oscillations and quantized Hall plate
aus were observed for two-dimensional carrier densities in the range of 10(
11) per square centimeter. Fractional quantum Hall states were observed in
tetracene crystals at temperatures as high as similar to 2 kelvin.