Bifurcation behavior of a superlattice model

Citation
M. Moscoso et al., Bifurcation behavior of a superlattice model, SIAM J A MA, 60(6), 2000, pp. 2029-2057
Citations number
48
Categorie Soggetti
Mathematics
Journal title
SIAM JOURNAL ON APPLIED MATHEMATICS
ISSN journal
00361399 → ACNP
Volume
60
Issue
6
Year of publication
2000
Pages
2029 - 2057
Database
ISI
SICI code
0036-1399(20000620)60:6<2029:BBOASM>2.0.ZU;2-6
Abstract
We present a complete description of the stationary and dynamical behavior of semiconductor superlattices in the framework of a discrete drift model b y means of numerical continuation, singular perturbation analysis, and bifu rcation techniques. The control parameters are the applied DC voltage (phi) and the doping (nu) in nondimensional units. We show that the organizing c enters for the long time dynamics are Takens-Bogdanov bifurcation points in a broad range of parameters and we cast our results in phi-nu phase diagra m. For small values of the doping, the system has only one uniform solution where all the variables are almost equal. For high doping we nd multistabi lity corresponding to domain solutions and the stationary solutions may exh ibit chaotic spatial behavior. In the intermediate regime of the solution c an be time-periodic depending on the bias. The oscillatory regions are rela ted to the appearance and disappearance of Hopf bifurcation tongues which c an be sub- or supercritical. These results are in good agreement with most of the experimental observations and also predict new interesting dynamical behavior.