An elastic model for the In-In correlations in InxGa1-xAs semiconductor alloys

Authors
Martins, AS Koiller, B Capaz, RB
Citation
As. Martins et al., An elastic model for the In-In correlations in InxGa1-xAs semiconductor alloys, SOL ST COMM, 115(6), 2000, pp. 287-290
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
115
Issue
6
Year of publication
2000
Pages
287 - 290
Database
ISI
SICI code
0038-1098(2000)115:6<287:AEMFTI>2.0.ZU;2-J
Abstract
Deviations from randomicity in InxGa1-xAs semiconductor alloys induced by e lastic effects are investigated within the Keating potential. Our model is based on Monte Carlo simulations on large (4096 atoms) supercells, performe d with two types of boundary conditions: fully periodic boundary conditions represent the bulk, while periodic boundary conditions along the x and y d irections and a free surface in the z direction simulate the epitaxial grow th environment. We show that In-In correlations identified in the bulk tend to be enhanced in the epitaxially grown samples. (C) 2000 Elsevier Science Ltd. All rights reserved.