GaAs delta-doped layers in Si for evaluation of SIMS depth resolution

Due to the complicated artefacts in SIMS depth profiling, SIMS depth resolu tion is difficult to evaluate, For evaluation of the SIMS depth resolution, delta-doped layers are more useful than sharp interfaces, because the matr ix effect and the sputtering rate change can be minimized in profiling thro ugh delta layers. The GaAs delta-doped layers in Si were grown and proposed as a reference material for the evaluation of SIMS depth resolution. The S IMS depth resolution was estimated using the analytical expression based on a double exponential with a Gaussian, and its dependence on SIMS analysis conditions such as ion energy, ion species and incidence angle was studied with the proposed GaAs delta-doped multilayers in Si, Copyright (C) 2000 Jo hn Wiley & Sons, Ltd.