SIMS study of GaAsN/GaAs multiple quantum wells

Depth profiling of GaAsN/GaAs multiple quantum well structures has been per formed by SIMS. It is shown that the experimental depth resolution does not depend on the kind of primary ions and improves proportionally with a decr ease of the primary ion energy. The SIMS results are compared with data of x-ray analysis of nitrogen concentration in GaAsN layers and with transmiss ion electron microscopy analysis of the thickness of the layers. Taking int o account the mechanism of GaAsN layer formation, experimental SIMS depth p rofiles of nitrogen are interpreted as resulting from a superposition of ul trathin GaAsN layers of thickness similar to 2.5 nm and diffusion profiles of 'excess' nitrogen formed during nitridation, Copyright (C) 2000 John Whe y & Sons, Ltd.