Adsorption of potassium on GaAs(110)

Citation
Je. Gayone et al., Adsorption of potassium on GaAs(110), SURF SCI, 454, 2000, pp. 137-140
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
SURFACE SCIENCE
ISSN journal
00396028 → ACNP
Volume
454
Year of publication
2000
Pages
137 - 140
Database
ISI
SICI code
0039-6028(20000520)454:<137:AOPOG>2.0.ZU;2-4
Abstract
The adsorption of potassium on the GaAs(110) surface has been studied by io n scattering and recoiling spectroscopy (SARS) and Auger electron spectrosc opy (AES). The SARS measurements indicate that a major part of the potassiu m atoms adsorb along the [001] gallium rows, in a region close to the sites of a new arsenic layer, and that only a miller Dart of the potassium atoms adsorb along the [001] arsenic rows. In agreement with this suggestion, th e energy shifts in the substrate Auger peaks indicate that, at the beginnin g of the adsorption, the potassium atoms react preferentially with gallium atoms. (C) 2000 Elsevier Science B.V. All rights reserved.