Distribution of dangling bond pairs on partially hydrogen-terminated Si(100) surface observed by scanning tunneling microscopy

Hydrogen recombinative desorption from a Si2H2 monohydride dimer on the Si( 100) surface regenerates a dangling bond (DB) pair on the dimer. In this pa per, we investigated the spatial distribution of the regenerated DB pairs o n the Si(100)-2 x 1:H and disilane-passivated Si(100) surface using elevate d temperature scanning tunneling microscopy (HT-STM) in the temperature ran ge between 590 and 622 K. Experimental results indicate that the ends of on e-dimensional (1D) monohydride dimer islands are preferred sites for DB pai rs and a repulsive interaction occurs between two neighboring DB pairs in t he same dimer row. (C) 2000 Elsevier Science B.V. All rights reserved.